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Development of Terahertz Semiconductor Devices Using Novel Nano-Heterostructures and Materials and their ICT Applications

update:2018-12-21
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Features

Terahertz coherent electromagnetic waves are expected to explore the potential application fields of future information and communications technologies. We are developing novel, ultra-broadband integrated signal-processing devices/systems operating in the terahertz frequency regime employing novel semiconductor nano-heterostructures and materials.
Frequency-tunable plasmon-resonant terahertz emitter and detectors and metamaterial circuits. By using an original dual-grating-gate high-electron mobility transistor (DGG-HEMT) structure with InP-based material systems record-breaking ultrahigh-sensitive detection and coherent monochromatic emission of terahertz radiation have been realized at room temperature. These devices work for terahertz imaging and spectroscopy.
Ultimately-fast terahertz transistors utilizing graphene, carbon-based new material, and compound semiconductor heterojunction material systems.
Graphene-based novel terahertz photonics devices, breaking through the limit on conventional technology. Recently we have succeeded in observation of light amplification of stimulated emission of terahertz radiation from optically pumped graphene. This will be the first step to realize a new type of graphene-based terahertz lasers.


Targeted Application(s)/Industry

By making full use of these world-leading device/circuit technologies, we are exploring future ultra-broadband wireless communication systems as well as spectroscopic/imaging systems for safety and security. We hope to conduct collaborative research with a willing company for a practical application of this technology in industry.

Researchers

Research Institute of Electrical Communication

OTSUJI, Taiichi , Professor
Doctor of Engineering

Keywords

Related Information

Publication
T. Otsuji et al., "Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene," IEEE Trans. Terahertz Sci. Technol., vol. 3, No. 1, pp. 63-72, 2013. doi: 10.1109/TTHZ.2012.2235911
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