Tohoku University. Research Profiles

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Development of Interconnect Materials and Processes for High Performance and High Reliability Electric Devices

update´╝Ü2018-12-17
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Features
Electronic products can be operated not only by semiconductors but also by metal interconnections attached to the semiconductors. Required properties for the metal interconnections are ohmic contact, diffusion barrier property, adhesion with semiconductors, and low resistivity, corrosion resistance, process reliability. Our group has committed ourselves to develop new metals and processes to meet the needs of wide-ranged device producers with consideration of cost performance. Topics of our research include (1) Cu alloys to self-form a diffusion barrier layer in multilayer interconnection of Si devices, (2) Cu alloys to form a reaction-doping layer in IGZO oxide semiconductors, (3) Nb alloys to achieve mechanical and thermal reliability with good ohmic property for SiC power devices, (4) Cu alloys for transparent conductive oxide such as ITO, (5) screen-printable Cu paste lines for solar cells, etc..

Targeted Application(s)/Industry
Our research efforts are targeted at metallization and interconnections for advanced LSI, flat panel displays, touch panels, power modules, solar cells, and other electronic devices. Collaborators include material producers, equipment vendors, and device producers in the entire value chain of electronic products.

Researchers

Department of Materials Science, Graduate School of Engineering

KOIKE, Junichi , Professor
PhD

Keywords

Related Information

Semiconductor devices of Si, IGZO oxide, III-V compounds; SiC power devices; solar cells; flat panel displays, touch panels.
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