• We found an effective catalyst system composed of CeO2 and 2-cyanopyridine for direct and catalytic polycarbonate formation reaction from CO2 and diols. CeO2 acted as an activator for CO2 and diols, and 2-cyanopyridine shifted the equilibrium in favor of the product side by hydration of 2-cyanopyridine, promoting the reaction. Green polycarbonates can be synthesized by combination of the catalyst system with a technique of diol syntheses from biomass.

This catalyst system is effective for direct transformation of CO2, contributing to the effective utilization and emission reduction of CO2. Combination of the catalyst system with a concentration technique of CO2 will bring about much advantage.

• The main research subject of our group is developing material purification methods, crystal growth methods and detector fabrication technologies for compound semiconductor radiation detectors. Our group intensely studies a compound semiconductor, thallium bromide (TlBr), for fabrication of gamma-ray detectors for the advanced radiation applications. The attractive physical properties of TlBr lie in its high atomic number (Tl: 81, Br: 35), high density (7.56 g/cm3) and wide bandgap (2.68 eV). Due to the high atomic number and high density, TlBr exhibits high photon stopping power. The wide bandgap of TlBr permits the device low-noise operation at and above room temperatures.

Our group focuses on development of compound semiconductor radiation detectors for advanced radiation applications including ultra-high resolution PET systems, ultra-high resolution SPECT systems, photon counting CT systems and Compton cameras. We hope to conduct collaborative research with a willing company for a practical application of this technology in industry.

We have developed a technique for quantitative analysis of microstructures (e.g., dislocations and irradiation defect aggregates) of activated and nuclear-burned specimens in the context of the Week Beam Scanning Transmission Electron Microscope (WB-STEM) method, which boasts extremely high measurement accuracy as a quantitative analysis method for lattice defects.
In combination with a dedicated heated sample holder with fully automated temperature measurement and current control in a cartridge-type heating furnace, changes in dislocation microstructure can be dynamically measured in-situ along with a highly reliable temperature history.

Conventional TEM methods require expertise in reciprocal space and dislocation theory, but our WB-STEM method is equipped with automatic analysis software for film thickness measurement and dislocation loop feature extraction, making it possible to analyze irradiation defects easily and precisely.

• Since its design, the WB-STEM method has been developed for implementation and on-site repair in radiation controlled areas where nuclear materials are handled, with special aperture and diffraction disc selection equipment, control and analysis software.
• WB-STEM accepts irradiation defect analysis of activated specimens from all over the world, including RPV monitoring specimens from European reactors and neutron-irradiated materials from US research reactors.
• It is also used to analyze the properties of iron-containing nuclear fuel simulated debris in decommissioning projects.

We support research organizations that currently use transmission electron microscopy to observe microstructures to introduce the WB-STEM method by special modification. We will instruct researchers who have no experience using transmission electron microscopy in the procedure for dislocation analysis.

We offer shared facility for the development of semiconductor prototypes equipped with 4-inch, 6-inch and some 8-inch wafer fabrication tools available on an hourly basis. Know-how accumulated at Tohoku University is available, and staff provide maximum support for prototyping. The service is performed at the 1,200 m2 Super Clean Room on the second floor of the Junichi Nishizawa Memorial Research Centre at Tohoku University. For information on equipment and fees, see our website.

More than 10 experienced technical staff assist customer's usages. Standard process conditions for each process, such as etching and deposition, are provided. allowing customers to start prototyping immediately. Various materials other than silicon can also be supported.

• We support the development of devices and semiconductor materials such as MEMS, optical elements and RF components.
• Technical consultation on devices and processes before and during prototyping is also available.
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• 'Prototype lab' for device packaging is also available.
• The museums where you can learn about the history of semiconductors, measuring instruments and sensors are open.
• As part of Technology Co-creation for Semiconductor of Tohoku University, we promote R&D of semiconductors and the development of human resources.
• On-demand semiconductor human resource development programs for students and engineers are available.
• As a member of the MEXT's Advanced Research Infrastructure for Materials (ARIM) program, we are involved in sharing facility and data.

More than 310 companies have used our shared facility since its launch in 2010, not only from device manufacturers such as MEMS, but also from manufacturers of materials, mechanical components and equipment. To date, we have successfully supported the commercialization of about 10 devices.