Development of Compound Semiconductor Radiation Detectors

Features and Uniqueness
  • The main research subject of our group is developing material purification methods, crystal growth methods and detector fabrication technologies for compound semiconductor radiation detectors. Our group intensely studies a compound semiconductor, thallium bromide (TlBr), for fabrication of gamma-ray detectors for the advanced radiation applications. The attractive physical properties of TlBr lie in its high atomic number (Tl: 81, Br: 35), high density (7.56 g/cm3) and wide bandgap (2.68 eV). Due to the high atomic number and high density, TlBr exhibits high photon stopping power. The wide bandgap of TlBr permits the device low-noise operation at and above room temperatures.
Practical Application

Our group focuses on development of compound semiconductor radiation detectors for advanced radiation applications including ultra-high resolution PET systems, ultra-high resolution SPECT systems, photon counting CT systems and Compton cameras. We hope to conduct collaborative research with a willing company for a practical application of this technology in industry.



Graduate School of Engineering

Keitaro Hitomi, Associate Professor
Doctor of Engineering