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Tohoku University Develops World's First Nonvolatile Memory Applicable to L3 Cache

A group led by Professor Hideo Ohno, of the Center for Spintronics Integrated Systems and of the Research Institute of Electrical Communication, Tohoku University, Sendai, Japan, and by Professor Tetsuo Endoh, of the Center for Spintronics Integrated Systems and of the Graduate School of Engineering, Tohoku University, has developed the world’s first embedded memory that can transfer data as fast as today’s state-of-the-art static random access memory (SRAM)1 and that can retain data even without power. They did this by combining the magnetic tunnel junction (MTJ) technology extensively researched and developed at Tohoku University with state-of-the-art silicon technologies in an academic-industrial alliance with NEC Corporation, Tokyo, Japan. The operating principle of the memory was verified by measuring the performance of a 1-Mb nonvolatile embedded memory macro fabricated in the Tsukuba Innovation Arena (TIA)2, Tsukuba, Japan, and based on the MTJ fabrication technology developed at Tohoku University. This achievement is a major step toward lowering the power consumption of today’s computing systems, which is important given that the performance gains being made by miniaturization of the constituent LSI chips come at the cost of an increase in power consumption.



More information
https://www.tohoku.ac.jp/english/newimg/pressimg/tohokuuniv-press_20130610_02e.pdf


[Contact]
Tohoku University
Center for Spintronics Integrated Systems
Yutaka Kadowaki
  1. 81-22-217-6116
yut-kado*riec.tohoku.ac.jp (Replace * with @)

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"Research and Development of Ultra-low Power Spintoronics- based VLSIs", supported by JSPS's FIRST
http://www.rpip.tohoku.ac.jp/seeds/profile/93/lang:en/


Novel-Concept Silicon Integrated Circuits Derived from the 3-Dimensional Device, Circuit and Architecture
http://www.rpip.tohoku.ac.jp/seeds/profile/94/lang:en/
update: 2013.06.18