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  • Development in Semiconductor Materials and Research of their Properties Considering Device Applications Bringing System Evolutions

Development in Semiconductor Materials and Research of their Properties Considering Device Applications Bringing System Evolutions

update:2018-12-21
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Features
1. Development of Distributed Feedback (DFB) Laser Diodes (LD) widely used in optical communications systems realizing a highly information-based society.
2. Nitride semiconductors famous for blue light emitting diodes
(a) Proposal of InGaAlN system considering device applications in 1989
(b) Success in growth of single crystalline InGaN by metalorganic vapor phase epitaxy (MOVPE) in 1989
(c) Prediction of band-gap energy (Eg) of InN much smaller than the reported values in 1989 and its experimental confirmation in 2002
(d) Observation of photoluminescense from InGaN in 1991
(e) Prediction of phase separation in InGaAlN in 1997
We promoted the JST-CREST project "Research on InN Semiconductor Laser Diodes with High Temperature-Stability for Optical Communications Systems".

Targeted Application(s)/Industry
DFB-LD: Fabrication of periodic structure with submicron scale, Epitaxial growth of semiconductor films on the substrate with fine structures, LD fabrication process, device evaluation, and device simulation
Nitride Semiconductors: MOVPE growth, N-polar growth, evaluation of materials, fabrication of light-emitting devices, solar cells, high-power transistors, and high-power transistors

Researchers

Institute for Materials Research

MATSUOKA, Takashi , Professor
Doctor of Engineering

Keywords

Related Information

Publications
1. CW Operation of DFB-BH GaInAsP/InP Lasers in 1.5 µm Wavelength Region (Electron. Lett., 18, 1982, 27)

2. Wide-Gap Semiconductor (In, Ga)N (Inst. Phys. Conf. Ser., 106, 1990, 141)

3. Wide-Gap Semiconductor InGaN and InGaAlN Grown by MOVPE (J. Electronic Mat., 21,1991, 157)

4. Optical Band-Gap Energy of Wurtzite InN (Appl. Phys. Lett., 81, 2002, 1246)

5. N-Polarity GaN on Sapphire Substrate Grown by MOVPE (phys. stat. sol. (b), 243, 2006, 1446)
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