R&D in Semiconductor Materials and their Device Applications Bringing System Evolutions
update：2021-08-03
Features
1. Development of Distributed Feedback (DFB) Laser Diodes (LD) widely used in optical communications systems realizing a highly information-based society. This LD increases the transmission capacity by 25,000 times per fiber which means the bit rate of 10Tb/s.2. Nitride semiconductors famous for blue light emitting diodes.
(a) Proposal of InGaAlN system considering device applications in 1989
(b) Success in growth of single crystalline InGaN by metalorganic vapor phase epitaxy (MOVPE) in 1989
(c) Prediction of band-gap energy (Eg) of InN much smaller than the values reported in 1980s and its experimental confirmation in 2002
(d) Observation of photoluminescence from InGaN in 1991
(e) Prediction of phase separation in InGaAlN in 1997
Targeted Application(s)/Industry
DFB-LD: Fabrication of periodic structure with submicron scale, Epitaxial growth of semiconductor films on the substrate with fine structures, LD fabrication process, device evaluation, and device simulationNitride Semiconductors: MOVPE growth, N-polar growth, Evaluation of semiconductor materials, Fabrication of light-emitting devices, solar cells, and high-power transistors
Researchers
New Industry Creation Hatchery Center
MATSUOKA Takashi
, Professor
Doctor of Engineering
Keywords
Related Information
1. CW Operation of DFB-BH GalnAsP/lnP Lasers in 1.5 µm Wavelength Region (Electron. Lett., 18, 1982, 27)
2. Wide-Gap Semiconductor (In, Ga)N (Inst. Phys. Conf. Ser., 106, 1990, 141)
3. Wide-Gap Semiconductor lnGaN and lnGaAlN Grown by MOVPE (J. Electronic Mat., 21,1991, 157)
4. Optical Band-Gap Energy of Wurtzite lnN (Appl. Phys. Lett., 81, 2002, 1246)
5. N-Polarity GaN on Sapphire Substrate Grown by MOVPE (Phys. Stat. Sol. (b), 243, 2006, 1446)
6. N-Polar GaN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Formed on Sapphire Substrate with Minimal Step Bunching (Appl. Phys. Express, 11, 2018, 015503)
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