R&D in Semiconductor Materials and their Device Applications Bringing System Evolutions
update:2021/08/03
- Features and Uniqueness
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- 1. Development of Distributed Feedback (DFB) Laser Diodes (LD) widely used in optical communications systems realizing a highly information-based society. This LD increases the transmission capacity by 25,000 times per fiber which means the bit rate of 10Tb/s.
- 2. Nitride semiconductors famous for blue light emitting diodes.
- (a) Proposal of InGaAlN system considering device applications in 1989
- (b) Success in growth of single crystalline InGaN by metalorganic vapor phase epitaxy (MOVPE) in 1989
- (c) Prediction of band-gap energy (Eg) of InN much smaller than the values reported in 1980s and its experimental confirmation in 2002
- (d) Observation of photoluminescence from InGaN in 1991
- (e) Prediction of phase separation in InGaAlN in 1997
- Practical Application
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DFB-LD: Fabrication of periodic structure with submicron scale, Epitaxial growth of semiconductor films on the substrate with fine structures, LD fabrication process, device evaluation, and device simulation
Nitride Semiconductors: MOVPE growth, N-polar growth, Evaluation of semiconductor materials, Fabrication of light-emitting devices, solar cells, and high-power transistors - Keywords
Researchers
New Industry Creation Hatchery Center
Takashi Matsuoka, Specially Appointed Professor(Research)
Doctor of Engineering