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A novel crystal growth via controlling an energy relationship between crystal and melt with applying an electric field

update：2020-06-16
 
 
 
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This lab is concerned with the novel approach mainly for the growth from melt by studying the relationship between the interface dynamics during growth and properties of grown crystals. Special interests lie in the growth of new crystals via the imposition of an interface-electric field. Nano-scaled control of crystal growth is executed in an electric double layer of ~nm thickness that is induced by applying an external electric field on the growth interface. Some of our growth results brought by applying an electric field are;
1. Growth of Langasite-type crystals for the pressure sensor at high temperature by manipulating the energy relationship between crystal and melt.
2. Easy nucleation of protein crystals that are normally hard to crystallize.
3. Formation of Si crystals with desired structure by manipulating the interface instability of Si.
Crystals developed this way will widen an opportunity to collaborate with industries in the field of the piezoelectric, magnetic, optic and other fields related to the highly-networked information society.

Researchers

Institute for Materials Research

UDA Satoshi , Professor
Ph.D.

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