• We are doing theoretical research on electrical conductivity in magnetoresistive devices using highly spin-polarized materials. The aim is to achieve very functional spintronics devices such as read-out heads for ultrahigh-density magnetic recording and non-volatile spin memories. We also investigate magnetoresistive devices using perpendicularly magnetized materials to ensure endurance against thermal fluctuations of the magnetization. We successfully achieve a guideline for improvement of the magnetoresistive performance by designing the crystal structure at the interface between ferromagnets and oxides theoretically.
• We believe that first-principles calculations, which need no empirical parameter, play a very important role in research and development of various materials. Please contact us if you want to collaborate with us.

• Highly-sensitive NMR technique has been developed by manipulation polarization of nuclear spins via control of transport characteristics in GaAs and InSb quantum structures. This highly-sensitive NMR can be applied to two-dimensional and nanostructures. Furthermore, ideal gate controllability has been demonstrated in InSb quantum structures with Al2 O3 dielectrics. More importantly, the concept of generalized coherence time was introduced, where noise characteristics felt by nuclear spins can be measured including their frequency dependence. This concept will bring about a change in all nuclear-spin related measurements.

Next generation InSb devices based on good gate controllability. Various nuclear-spin based measurements and NMR utilizing the concept of generalized coherence time. Highly-sensitive NMR is now important for fundamental physics studies. In the future, it will contribute to quantum information processing.