• The main research subject of our group is developing material purification methods, crystal growth methods and detector fabrication technologies for compound semiconductor radiation detectors. Our group intensely studies a compound semiconductor, thallium bromide (TlBr), for fabrication of gamma-ray detectors for the advanced radiation applications. The attractive physical properties of TlBr lie in its high atomic number (Tl: 81, Br: 35), high density (7.56 g/cm3) and wide bandgap (2.68 eV). Due to the high atomic number and high density, TlBr exhibits high photon stopping power. The wide bandgap of TlBr permits the device low-noise operation at and above room temperatures.

Our group focuses on development of compound semiconductor radiation detectors for advanced radiation applications including ultra-high resolution PET systems, ultra-high resolution SPECT systems, photon counting CT systems and Compton cameras. We hope to conduct collaborative research with a willing company for a practical application of this technology in industry.

• Conventional X-ray imaging methods that rely on X-ray attenuation cannot generate clear contrast in the observation of low-density materials such as polymers consisting of low-Z elements. However, the sensitivity to the materials can be improved drastically by X-ray phase imaging that detects X-ray refraction caused by the materials. X-ray Talbot or Talbot-Lau interferometry consisting of X-ray transmission gratings is now constructed in laboratories for X-ray phase imaging. X-ray phase tomography is also realized, enabling high-sensitive three-dimensional observation.
• X-ray phase imaging can be utilized for X-ray non-destructive testing of industrial products and baggage that cannot be checked conventionally.

We aim at appending a phase-contrast mode to micro-CT apparatuses and developing screening apparatuses in production lines.

• Phase change random access memory (PCRAM) has attracted attention as next-generation non-volatile memories. A conventional PCM is Ge-Sb-Te which shows a fast crystallization speed and an excellent reversibility of phase transition. However, Ge-Sb-Te has a low crystallization temperature of about 150 ºC and a high melting temperature of over 600 ºC , which limits data retention and causes high power consumption, respectively.
• We have developed a new phase change materials with high crystallization temperature and low melting point such as Ge-Cu-Te etc, which have high potential as PCRAM materials with high thermal stability and low power consumption (Fig.1,2).

Our materials are developed for PCRAM, DVD recording materials etc. We hope the collaboration research with companies which are interested in our developed phase change materials.

We offer shared facility for the development of semiconductor prototypes equipped with 4-inch, 6-inch and some 8-inch wafer fabrication tools available on an hourly basis. Know-how accumulated at Tohoku University is available, and staff provide maximum support for prototyping. The service is performed at the 1,200 m2 Super Clean Room on the second floor of the Junichi Nishizawa Memorial Research Centre at Tohoku University. For information on equipment and fees, see our website.

More than 10 experienced technical staff assist customer's usages. Standard process conditions for each process, such as etching and deposition, are provided. allowing customers to start prototyping immediately. Various materials other than silicon can also be supported.

• We support the development of devices and semiconductor materials such as MEMS, optical elements and RF components.
• Technical consultation on devices and processes before and during prototyping is also available.
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• 'Prototype lab' for device packaging is also available.
• The museums where you can learn about the history of semiconductors, measuring instruments and sensors are open.
• As part of Technology Co-creation for Semiconductor of Tohoku University, we promote R&D of semiconductors and the development of human resources.
• On-demand semiconductor human resource development programs for students and engineers are available.
• As a member of the MEXT's Advanced Research Infrastructure for Materials (ARIM) program, we are involved in sharing facility and data.

More than 330 companies have used our shared facility since its launch in 2010, not only from device manufacturers such as MEMS, but also from manufacturers of materials, mechanical components and equipment. To date, we have successfully supported the commercialization of about 10 devices.