• Electronic products can be operated not only by semiconductors but also by metal interconnections attached to the semiconductors. Required properties for the metal interconnections are ohmic contact, diffusion barrier property, adhesion with semiconductors, and low resistivity, corrosion resistance, process reliability. Our group has committed ourselves to develop new metals and processes to meet the needs of wide-ranged device producers with consideration of cost performance. Topics of our research include (1) Cu alloys to self-form a diffusion barrier layer in multilayer interconnection of Si devices, (2) Cu alloys to form a reaction-doping layer in IGZO oxide semiconductors, (3) Nb alloys to achieve mechanical and thermal reliability with good ohmic property for SiC power devices, (4) Cu alloys for transparent conductive oxide such as ITO, (5) screen-printable Cu paste lines for solar cells, etc..

Our research efforts are targeted at metallization and interconnections for advanced LSI, flat panel displays, touch panels, power modules, solar cells, and other electronic devices. Collaborators include material producers, equipment vendors, and device producers in the entire value chain of electronic products.

• Electronic products can be operated not only by semiconductors but also by metal interconnections attached to the semiconductors. Required properties for the metal interconnections are ohmic contact, diffusion barrier property, adhesion with semiconductors, and low resistivity, corrosion resistance, process reliability. Our group has committed ourselves to develop new metals and processes to meet the needs of wide-ranged device producers with consideration of cost performance. Topics of our research include (1) Cu alloys to self-form a diffusion barrier layer in multilayer interconnection of Si devices, (2) Cu alloys to form a reaction-doping layer in IGZO oxide semiconductors, (3) Nb alloys to achieve mechanical and thermal reliability with good ohmic property for SiC power devices, (4) Cu alloys for transparent conductive oxide such as ITO, (5) screen-printable Cu paste lines for solar cells, etc..

Our research efforts are targeted at metallization and interconnections for advanced LSI, flat panel displays, touch panels, power modules, solar cells, and other electronic devices. Collaborators include material producers, equipment vendors, and device producers in the entire value chain of electronic products.

• Tactile sense and the sense of touch are multiple combinations of fundamental sensations, such as smooth and rough, soft and hard, dry and wet, and hot and cold sensations. These sensations are described with the information on force, distortion, temperature, stickiness and oscillation.
• A tactile sensor corresponding to several types of human skin sensory receptors and an active tactile sensor system that is an integrated sensor structure imitating human haptic motions have been developed. These sensor systems allowed measurement of "Kansei" words that are extremely vague tactile feelings, and roughness, softness and temperature sensations. However, tactile sense or the sense of touch also includes other sensations and combinations of them. Therefore, to develop a sensor, it is important to define how the sensations and physical information relating to the sensations are obtained and what relationships exist between them.
• In this research, the relationships between sensations, including fundamental sensations that have already been obtained and other sensations, and the relevant physical information are being investigated. Additionally, on the basis of the knowledge through the investigation, an advanced sensor system that allows obtaining haptic information is being developed.

The research is beneficial not only to life science but also to manufacturing fields.

We offer shared facility for the development of semiconductor prototypes equipped with 4-inch, 6-inch and some 8-inch wafer fabrication tools available on an hourly basis. Know-how accumulated at Tohoku University is available, and staff provide maximum support for prototyping. The service is performed at the 1,200 m2 Super Clean Room on the second floor of the Junichi Nishizawa Memorial Research Centre at Tohoku University. For information on equipment and fees, see our website.

More than 10 experienced technical staff assist customer's usages. Standard process conditions for each process, such as etching and deposition, are provided. allowing customers to start prototyping immediately. Various materials other than silicon can also be supported.

• We support the development of devices and semiconductor materials such as MEMS, optical elements and RF components.
• Technical consultation on devices and processes before and during prototyping is also available.
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• 'Prototype lab' for device packaging is also available.
• The museums where you can learn about the history of semiconductors, measuring instruments and sensors are open.
• As part of Technology Co-creation for Semiconductor of Tohoku University, we promote R&D of semiconductors and the development of human resources.
• On-demand semiconductor human resource development programs for students and engineers are available.
• As a member of the MEXT's Advanced Research Infrastructure for Materials (ARIM) program, we are involved in sharing facility and data.

More than 310 companies have used our shared facility since its launch in 2010, not only from device manufacturers such as MEMS, but also from manufacturers of materials, mechanical components and equipment. To date, we have successfully supported the commercialization of about 10 devices.

• SiC ceramics is generally prepared at high temperature of 1200–2000ºC. We are able to prepare SiC at around 700ºC by using Na. Nano-powder of beta-type SiC was obtained from a mixture of Si and carbon powders in a Na melt. SiC porous ceramics were synthesized by heating mixtures of Si powder and carbon black at 700–900ºC in Na vapor. Biomorphic cellular SiC ceramics were formed by heating carbonized woods at 700 ºC with a Na-Si melt.

Applications : SiC porous ceramics are used in a wide range of applications, such as filters for gas or molten metal, diesel particle filters, catalysis supports, and light-weight structural materials.
Industry : Ceramic Engineering

• Microwave processing is one of the attractive fields in recent materials processing. We perform various materials processing using non-equilibrium reaction field induced by microwave and/or ultrasonic irradiation. The topic contains powder metallurgy, nitride coatings, synthesis of new functional materials, fabrication of nanoparticles, etc. Recently we have developed a new TiN coating method using our microwave irradiation equipment operated at a frequency of 2.45 GHz. The method is simple but applicable to various substrates with complex shape. This method can be applied to various nitride coatings and will open a new coating technology in many fields of applications.

The major targets of TiN coatings are for cutting tools, ball bearings, dental implants, die and mold for stamping, and ornaments. The newly developed method makes it possible to perform nitride coatings within a short time using a standard microwave heating equipment. We hope to conduct collaborative research with a willing company for a practical application of these technology.