• 1. Development of Distributed Feedback (DFB) Laser Diodes (LD) widely used in optical communications systems realizing a highly information-based society. This LD increases the transmission capacity by 25,000 times per fiber which means the bit rate of 10Tb/s.
• 2. Nitride semiconductors famous for blue light emitting diodes.
• (a) Proposal of InGaAlN system considering device applications in 1989
• (b) Success in growth of single crystalline InGaN by metalorganic vapor phase epitaxy (MOVPE) in 1989
• (c) Prediction of band-gap energy (Eg) of InN much smaller than the values reported in 1980s and its 　 experimental confirmation in 2002
• (d) Observation of photoluminescence from InGaN in 1991
• (e) Prediction of phase separation in InGaAlN in 1997

DFB-LD: Fabrication of periodic structure with submicron scale, Epitaxial growth of semiconductor films on the substrate with fine structures, LD fabrication process, device evaluation, and device simulation

Nitride Semiconductors: MOVPE growth, N-polar growth, Evaluation of semiconductor materials, Fabrication of light-emitting devices, solar cells, and high-power transistors

• Electronic products can be operated not only by semiconductors but also by metal interconnections attached to the semiconductors. Required properties for the metal interconnections are ohmic contact, diffusion barrier property, adhesion with semiconductors, and low resistivity, corrosion resistance, process reliability. Our group has committed ourselves to develop new metals and processes to meet the needs of wide-ranged device producers with consideration of cost performance. Topics of our research include (1) Cu alloys to self-form a diffusion barrier layer in multilayer interconnection of Si devices, (2) Cu alloys to form a reaction-doping layer in IGZO oxide semiconductors, (3) Nb alloys to achieve mechanical and thermal reliability with good ohmic property for SiC power devices, (4) Cu alloys for transparent conductive oxide such as ITO, (5) screen-printable Cu paste lines for solar cells, etc..

Our research efforts are targeted at metallization and interconnections for advanced LSI, flat panel displays, touch panels, power modules, solar cells, and other electronic devices. Collaborators include material producers, equipment vendors, and device producers in the entire value chain of electronic products.

• Most innovations have been triggered by advent of new materials. We focus on to explore new inorganic materials and their synthesis routes on the basis of our knowledge about the material design and various materials processing technologies. We develop proton conducting phosphate glasses working at intermediate temperatures and narrow gap oxide semiconductors applicable in visible and NIR regions. Thin-film solar cells, fuel cells using those materials are also developing.

We focus on oxide semiconductors and proton conducting electrolytes and electrodes in order to apply them in solar cells, fuel cells, light-emitting devices. But, applicable area of our technologies is not limited in those applications.

• 1) We investigate interesting properties of nanostructures and develop materials and devices utilizing nanostructures.
• 2) We have techniques and skills on low-noise electric measurements, cryogenics, nanofabrication, and data informatics. We are open to new collaborations.

• Our research aims at developing methods, including instrumentation, for characterizing surface (or interface) at the nano-meter level. Most of our research subjects are related to the surface forces measurement, which can directly monitor the interaction between two surfaces. We study phenomena occurring at the solid-liquid interface such as adsorption and structuring of liquids. We have developed the resonance shear measurement which is a sensitive method for evaluating properties of confined liquid for nano-rheology and tribology. Twin-path surface forces apparatus we developed enabled us to study wide variety of samples such as metals, ceramics and plastics.

These methods are applicable for characterizing lubricants, nano-materials, paints, sealants, and cosmetics. We hope to conduct collaborative research with a willing company for a practical application of this technology in industry.

• We developed both pH and Cl- imaging plates, which can visualize the pH and Cl- concentration on metal surfaces in acidic environments. The pH range is from 3.0 to 0.5, and Cl- concentration up to 4 M can be measured. Fluorescent dyes are successively used for pH and Cl- imaging in the field of biology, but their sensitivity tends to be insufficient in acidic and/or highly concentrated chloride solutions. A glass plate with a sol-gel sensing layer, which contains a pH indicator or a Cl- sensitive florescent dye was fabricated and validated using the solutions with various pH values and Cl- concentrations. Changes in the pH and Cl- distribution on stainless surface in an acidic environment were measured quantitatively.

The newly developed imaging plates can be used to investigate the mechanism of various chemical reactions, such as corrosion, which occurs in an acidic environment. Micro-flow imaging using our sensing technique will be a promising approach to understand the catalytic chemistry of metal surfaces.
強調

• The main research subject of our group is developing material purification methods, crystal growth methods and detector fabrication technologies for compound semiconductor radiation detectors. Our group intensely studies a compound semiconductor, thallium bromide (TlBr), for fabrication of gamma-ray detectors for the advanced radiation applications. The attractive physical properties of TlBr lie in its high atomic number (Tl: 81, Br: 35), high density (7.56 g/cm3) and wide bandgap (2.68 eV). Due to the high atomic number and high density, TlBr exhibits high photon stopping power. The wide bandgap of TlBr permits the device low-noise operation at and above room temperatures.

Our group focuses on development of compound semiconductor radiation detectors for advanced radiation applications including ultra-high resolution PET systems, ultra-high resolution SPECT systems, photon counting CT systems and Compton cameras. We hope to conduct collaborative research with a willing company for a practical application of this technology in industry.

• We are doing theoretical research on electrical conductivity in magnetoresistive devices using highly spin-polarized materials. The aim is to achieve very functional spintronics devices such as read-out heads for ultrahigh-density magnetic recording and non-volatile spin memories. We also investigate magnetoresistive devices using perpendicularly magnetized materials to ensure endurance against thermal fluctuations of the magnetization. We successfully achieve a guideline for improvement of the magnetoresistive performance by designing the crystal structure at the interface between ferromagnets and oxides theoretically.
• We believe that first-principles calculations, which need no empirical parameter, play a very important role in research and development of various materials. Please contact us if you want to collaborate with us.